View SA2421_239022.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

INTEGRATED CIRCUITS
SA2421 2.45 GHz low voltage RF transceiver
Product specification Supersedes data of 2000 Feb 11 2000 Mar 13
Philips Semiconductors
Philips Semiconductors
Product specification
2.45 GHz low voltage RF transceiver
SA2421
DESCRIPTION
The SA2421 transceiver is a combined low-noise amplifier, receive mixer, transmit mixer and LO buffer IC designed using a 20 GHz fT BiCMOS process, QUBiC2, for high-performance low-power communication systems for 2.4-2.5 GHz applications. The LNA has a 3.2 dB noise figure at 2.45 GHz with 14.3 dB gain and an IP3 intercept of -3 dBm at the input. The wide-dynamic-range receive mixer has a 11.2 dB noise figure and an input IP3 of +2.5 dBm at 2.45 GHz. The nominal current drawn from a single 3 V supply is 34 mA in transmit mode and 20 mA in receive mode. The SA2421 differs from the SA2420 by removal of the LO doubler and LO switch. The LNA reverse isolation is improved, and a separate pin is allocated for the transmit output.
PIN CONFIGURATION
DH Package
GND LNA IN GND GND Rx IF OUT Rx IF OUT Tx IF IN Tx IF IN GND 1 2 3 4 5 6 7 8 9 10 11 12 24 VCC 23 LNA OUT 22 GND 21 ATTEN SW 20 GND 19 Rx IN 18 GND 17 Tx OUT 16 GND 15 GND 14 VCC LO 13 CHIP EN
FEATURES
LOP Tx/Rx LOM
* Low current consumption: 34 mA nominal transmit mode and
20 mA nominal receive mode
* High system power gain: 24 dB (LNA + Mixer) at 2.45 GHz * Excellent gain stability versus temperature and supply voltage * Separate Rx IN and Tx OUT pins * Wide IF range: 50-500 MHz * -10dBm typical LO input power * Improved LNA reverse isolation S12 * TSSOP24 package
ORDERING INFORMATION
DESCRIPTION
SR01756
Figure 1. Pin configuration
APPLICATIONS
* IEEE 802.11 (WLAN) * 2.45 GHz ISM band
TEMPERATURE RANGE -40C to +85C
ORDER CODE SA2421DH
DWG # SOT355-1
24-Pin Plastic Thin Shrink Small Outline Package (Surface-mount, TSSOP)
BLOCK DIAGRAM
VCC 24 LNA OUT 23 GND 22 ATTEN SW 21 GND 20 Rx IN 19 GND 18 Tx OUT 17 GND 16 GND 15 VCC LO 14 CHIP EN 13
PRE-DRIVER
BPF ATTENUATOR LNA RX
RX
TX
LO BUFFER
X1
1
2
3
4
5
6
7
8
9
10
11
12
GND
LNA IN
GND
GND
Rx IF OUT
Rx IF OUT
Tx IF IN
Tx IF IN
GND
LOP
Tx/Rx
LOM
SR01757
Figure 2. SA2421 block diagram
2000 Mar 13
2
853-2189 23308
Philips Semiconductors
Product specification
2.45 GHz low voltage RF transceiver
SA2421
ABSOLUTE MAXIMUM RATINGS
SYMBOL VCC VIN PD TJMAX PMAX TSTG Supply voltage Voltage applied to any pin Power dissipation, Tamb = 25C (still air) 24-Pin Plastic TSSOP Maximum operating junction temperature Maximum power (RF/IF/LO pins) Storage temperature range PARAMETER RATING -0.3 to +6 -0.3 to (VCC + 0.3) 555 150 +20 -65 to +150 UNITS V V mW C dBm C
NOTES: 1. Transients exceeding these conditions may damage the product. 2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, and absolute maximum ratings may impact product reliability JA: 24-Pin TSSOP = 117C/W 3. IC is protected for ESD voltages up to 2000 V, human body model.
RECOMMENDED OPERATING CONDITIONS
SYMBOL VCC Tamb Supply voltage Operating ambient temperature range PARAMETER RATING 2.7 to 5.5 -40 to +85 UNITS V C
DC ELECTRICAL CHARACTERISTICS
VCC = +3V, Tamb = 25C; unless otherwise stated. SYMBOL ICCTX ICCRX ICC OFF VLNA-IN VLO GHz VTX IF VTX IFB IBIAS S PARAMETER Total supply current, Transmit Total supply current, Receive Power down mode LNA input voltage LO buffer DC input voltage Tx Mixer input voltage Tx Mixer input voltage Input bias current TEST CONDITIONS Tx/Rx = Hi Tx/Rx mode = Lo, LNA = Hi gain Tx/Rx = GND Atten SW = VCC Enable = GND Receive mode Tx/Rx = Lo Tx/Rx = Hi Tx/Rx = Hi Logic 1 Logic 0 -0.1 1.7 1.7 6 0 0.855 VCC LIMITS MIN 22 14 TYP 34 20 MAX 42 26 10 UNITS mA mA A V V V V A A
2000 Mar 13
3
Philips Semiconductors
Product specification
2.45 GHz low voltage RF transceiver
SA2421
AC ELECTRICAL CHARACTERISTICS
VCC = +3 V, Tamb = 25C; LOIN = -10 dBm @ 2.1 GHz; fRF = 2.45 GHz; unless otherwise stated. SYMBOL fRF fIF S21 S12 S11 S22 ISO P-1dB IP3 NF S21 S12 S11 S22 ISO P-1dB IP3 NF PARAMETER RF frequency range3 IF frequency range3 Amplifier gain Amplifier reverse isolation Amplifier input match1 Amplifier output match1 Isolation: LOX to LNAIN Amplifier input 1dB gain compression Amplifier input third order intercept Amplifier noise figure (50) Amplifier gain Amplifier reverse isolation Amplifier input match1 Amplifier output match1 Isolation: LOX to LNAIN Amplifier input 1dB gain compression Amplifier input third order intercept Amplifier noise figure (50 ) Power conversion gain into 50 : matched to 50 W using external balun circuitry. Input match at RF (2.45 GHz)1 SSB noise figure (2.45 GHz) (50 ) Mixer input 1 dB gain compression Input third order intercept RF feedthrough to IF4 LO feedthrough to IF5 f1 - f2 = 1MHz CL = 2 pF per side CL = 2 pF per side 1.8 9.8 LNA gain = Hi LNA gain = Hi LNA gain = Hi LNA gain = Hi LNA gain = Hi LNA gain = Hi f1 - f2 = 1 MHz, LNA gain = Hi LNA gain = Hi LNA gain = Low LNA gain = Low LNA gain = Low LNA gain = Low LNA gain = Low LNA gain = Low f1 - f2 = 1 MHz, LNA gain = Low LNA gain = Low fS = 2.45 GHz, fLO = 2.1 GHz, fIF = 350 MHz -4.5 3.1 -18.5 TEST CONDITIONS LIMITS MIN 2.4 300 13.3 -3 TYP 2.45 350 14.3 -32 -10 -9 -43 -15 -3.2 3.2 -19.4 -26 -8 -8 -45 2 18 18.5 -1.9 3.3 -20.3 15.3 +3 MAX 2.5 400 UNITS GHz MHz dB dB dB dB dB dBm dBm dB dB dB dB dB dB dBm dBm dB
LNA High gain mode (In = Pin 2; Out = 23)
LNA High Overload Mode (low gain mode)
Rx Mixer (Rx IN = Pin 19, IF = Pins 5 and 6, LO = Pin 10 or 12, PLO = -10 dBm) PGC S11-RF NFM P-1dB IP3 PRF-IF PLO-IF 9.5 10 -11 11.2 -10.5 2.2 -35 -32 2.6 12.5 10.5 dB dB dB dBm dBm dBc dBc
Rx Mixer Spurious Components (PIN = P-1dB)
2000 Mar 13
4
Philips Semiconductors
Product specification
2.45 GHz low voltage RF transceiver
SA2421
AC ELECTRICAL CHARACTERISTICS (continued)
SYMBOL PARAMETER TEST CONDITIONS LIMITS MIN -3 TYP +3 MAX UNITS
Tx Mixer (Tx OUT = Pin 17, IF = Pins 7 and 8, LO = Pin 10 or 12, PLO = -10 dBm) PGC S11-RF NFM P-1dB IP3 PIF-RF PLO-RF PIMAGE-RF LO Buffer PLO IN S11-LO fLOG Switching2 tRx-Tx tTx-Rx tPOWER UP tPWR DWN Receive-to-transmit switching time Transmit-to-Receive switching time Chip enable time Chip disable time 1 1 1 1 s s s s LO drive level Mixer input match (LO = 2.1 GHz) LOG frequency range3 1.9 -15 -10 -10 2.1 2.3 -5 dBm dB GHz Power conversion gain: RL = 50 RS = 50 Output match at RF (2.45 GHz)1 SSB noise figure (2.45 GHz) (50 ) Output 1dB gain compression Output third order intercept IF feedthrough to RF4 LO feedthrough to RF5 Image feedthrough to RF6 f1 - f2 = 1 MHz 10.1 10.9 fS = 2.45 GHz, fLO = 2.1 GHz, fIF = 350 MHz 22.5 23 -10 11.2 4.2 12.2 -50 -22 -20 14.3 11.5 23.5 dB dB dB dBm dBm dBc dBc dBc
Tx Mixer Spurious Components (POUT = P-1dB)
NOTES: 1. With simple external matching 2. With 50 pF coupling capacitors on all RF and IF parts 3. This part has been optimized for the stated frequency range. Operation outside this frequency range may yield performance other than specified in this datasheet. 4. Measured 5dB lower than 1dB compression point, with typical output matching network. 5. Measured at 1dB compression point. 6. With typical output matching network (no image reject mixer is used).
2000 Mar 13
5
Philips Semiconductors
Product specification
2.45 GHz low voltage RF transceiver
SA2421
Table 1. Truth Table
Chip-En 0 1 1 1 ATT-SW X 1 0 X TX-RX X 0 0 1 Sleep Receive Receive Transmit Mode LNA Gain N/S +14.3 dB -19 dB N/S RX Mixer off on on off TX Mixer and Predriver off off off on
FUNCTIONAL DESCRIPTION
The SA2421 is a 2.45 GHz transceiver front-end available in the TSSOP-24 package. This integrated circuit (IC) consists of a low noise amplifier (LNA) and up- and down-converters. There is an enable/disable switch available to power up/down the entire chip in 1 s, typically. This transceiver has several unique features. The LNA has two operating modes: 1) high gain mode with a gain = +14.3 dB; and 2) low gain mode with a gain -19 dB. The switch for
this option is internal and is controlled externally by high and low logic to the pin. When the LNA is switched into the attenuation mode, active matching circuitry (on-chip) is switched in (reducing the number of off-chip components required). To reduce power consumption when the chip is transmitting, the LNA is automatically switched into a "sleep" mode (internally) without the use of external circuitry.
2000 Mar 13
6
Philips Semiconductors
Product specification
2.45 GHz low voltage RF transceiver
SA2421
23 22 Current (mA) Noise (dB) -40_C 0_C 25_C 70_C 85_C 21 20 19 18 17 TEMPERATURE (C) 2.7V 3.0V 3.8V 5.5V
4.0 3.8 3.6 3.4 3.2 3.0 2.8 -40_C 0_C 25_C 70_C 85_C TEMPERATURE (C)
SR02262
2.7V
3.0V
3.8V
5.5V
SR02265
Figure 3. LNA / Receive Supply Current vs Supply Voltage and Temperature
Figure 6. LNA Noise Figure vs Supply Voltage and Temperature
15
11.5
Gain (dB)
14 Gain dB 13
10.5
9.5
12 -40_C 0_C 25_C 70_C 85_C TEMPERATURE (C) 2.7V 3.0V 3.8V 5.5V
8.5 -40_C 0_C 25_C 70_C 85_C TEMPERATURE (C)
SR02263
2.7V
3.0V
3.8V
5.5V
SR02266
Figure 4. LNA Gain vs Supply Voltage and Temperature
Figure 7. RX Gain vs Supply Voltage and Temperature
3.0 -1.0 -1.5 -2.0 IP3 (dBm) -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -40_C 0_C 25_C 70_C 85_C 2.7V 2.7V 3.0V 3.8V 5.5V TEMPERATURE (C) 3.0V 3.8V 5.5V 1 -40_C 0_C 25_C 70_C 85_C TEMPERATURE (C) IP3 (dBm) 2.5
2.0
1.5
SR02267
SR02264
Figure 5. LNA Input IP3 vs Supply Voltage and Temperature
Figure 8. Receive Input IP3 vs Supply Voltage and Temp
2000 Mar 13
7
Philips Semiconductors
Product specification
2.45 GHz low voltage RF transceiver
SA2421
12.5 12.0 NF (dB) 11.5 11.0 10.5 10 -40_C 0_C 25_C 70_C 85_C TEMPERATURE (C) 2.7V 3.0V 3.8V 5.5V Gain (dB)
29 27 25 23 21 19 17 15 -40_C 0_C 25_C 70_C 85_C TEMPERATURE (C)
SR02268
2.7V
3.0V
3.8V
5.5V
SR02271
Figure 9. Receive Noise Figure vs Supply Voltage and Temp
Figure 12. Transmit Gain vs Supply Voltage and Temp
-9.0 -9.5 Output IP3 (dBm) -40_C 0_C 25_C 70_C 85_C -10.0 P-1dB (dBm) -10.5 -11.0 -11.5 -12.0 -12.5 -13 TEMPERATURE (C) 2.7V 3.0V 3.8V 5.5V
20 18 16 14 12 10 8 6 4 2 0 -40_C 0_C 25_C 70_C 85_C TEMPERATURE (C)
SR02269
2.7V
3.0V
3.8V
5.5V
SR02272
Figure 10. RX 1dB Compression vs Supply Voltage and Temp
Figure 13. Transmit Output IP3 vs Supply Voltage and Temp
38 37 36 Current (mA) NF (dB) -40_C 0_C 25_C 70_C 85_C 35 34 33 32 31 30 TEMPERATURE (C) 2.7V 3.0V 3.8V 5.5V
13.0 12.5 12.0 11.5 11.0 10.5 10.0 9.5 9.0 8.5 8 -40_C 0_C 25_C 70_C 85_C TEMPERATURE (C)
SR02270
2.7V
3.0V
3.8V
5.5V
SR02273
Figure 11. Transmit Current vs Supply Voltage and Temp
Figure 14. Transmit Noise Figure vs Supply Voltage and Temp
2000 Mar 13
8
Philips Semiconductors
Product specification
2.45 GHz low voltage RF transceiver
SA2421
9 8 7 6 5 4 3 2 1 0 -1 -40_C 0_C 25_C 70_C 85_C TEMPERATURE (C) 2.7V 3.0V 3.8V 5.5V
12.0 11.5 11.0 10.5 10.0 9.5 9.0 8.5 8.0 7.5 7 -18
Receive Gain (dB)
P-1dB (dBm)
-16
-14
-12
-10
-8
-5
-2
LO Input (dBm)
SR02274
-40C
0C
+25C
+70C
+85C
SR02276
Figure 15. TX 1dB compression vs Supply Voltage and Temp
Figure 17. Receive Gain vs LO Input over Temp Range
-10 -11 -12 P-1dB (dBm) -13 -14 -15 -16 -17 -18 -40_C 25_C TEMPERATURE (C) 2.7V 3.0V 3.8V 5.5V 85_C Transmit Gain (dB)
26 25 24 23 22 21 20 19 18 17 -18 -16 -14 -12 -10 -8 -5 -2
LO Input (dBm)
SR02275
-40C
0C
+25C
+70C
+85C
SR02277
Figure 16. LNA 1dB compression vs Supply Voltage and Temp
Figure 18. Transmit Gain vs LO Input over Temp Range The Rx IN port is matched to 50 and has an input IP3 of +2.2 dBm (mixer only). The down-convert mixer is buffered and has open collectors at the pins to allow for matching to common SAW filters. The up convert mixer has an input pin to output pin gain of 23 dB. The output of the up-converter is designed for a power level = +4.2 dBm (P-1dB).
2000 Mar 13
9
JP1 1 2 V cc C16 100pF C17 10uF + U1 1 GND 24 C15 .1uF J7 LNA OUT cc C2 SEL (0pF-1.0pF) L1 3.9nH 2 C1 1pF 3 GND 22 S3 4 C4 3.9pF C5 SEL (0pF-1.0pF) 6 Rx IF OUT 19 Rx IN L3 33nH 5 Rx IF OUT 20 J6 RxRF IN 2.45GHz GND GND 21 ATTEN SW V cc GND L7 1.2nH LNA IN LNA OUT 23 J1 LNA IN L2 39nH V V cc
2000 Mar 13
V cc C3 10pF
Philips Semiconductors
Rx OUT 350MHz
J2
2.45 GHz low voltage RF transceiver
SA2421
7 Tx IF IN 18 Tx OUT 17 C14 100pF 16 L6 2.7nH LOP GND 15 C6 10pF L4 33nH 8 C7 100pF C9 8.2pF 9 GND GND C10 100pF 10 V cc S1 11 Tx/Rx Vcc LO 14 C13 33pF CHIP EN 13 C8 8.2pF Tx IF IN GND
Figure 19.
Tx IN 350MHz
10
12 J4 LO 2.1GHz C11 1.0pF L5 2.7nH LOM
J3
J5 TxRF OUT 2.45GHz
V cc C12 100pF
S2
V cc
Product specification
SR01758
SA2421
Philips Semiconductors
Product specification
2.45 GHz low voltage RF transceiver
SA2421
TSSOP24: plastic thin shrink small outline package; 24 leads; body width 4.4 mm
SOT355-1
2000 Mar 13
11
Philips Semiconductors
Product specification
2.45 GHz low voltage RF transceiver
SA2421
Data sheet status
Data sheet status Objective specification Preliminary specification Product specification Product status Development Qualification Definition [1] This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Production
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Disclaimers
Life support -- These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088-3409 Telephone 800-234-7381 (c) Copyright Philips Electronics North America Corporation 2000 All rights reserved. Printed in U.S.A. Date of release: 03-00 Document order number: 9397 750 06949
Philips Semiconductors
2000 Mar 13 12

▲Up To Search▲

Price & Availability of SA2421

	To Download SA2421 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .